1 2 3 4 5 6 sot-363 device shipping ordering information m mbt3904dw1t1 marking 3000 units/reel the MMBT3904DW1T1 device is a spinoff of our popular sot23/sot323 threeleaded device. it is designed for general purpose amplifier applications and is housed in the sot363 sixleaded surface mount package. by putting two discrete devices in one package, this device is ideal for lowpower surface mount applications where board space is at a premium. weight :0.005g ? h fe , 100300 ? low v ce(sat) , 0.4 v ? simplifies circuit design ? reduces board space ? reduces component count ? available in 8 mm, 7inch/3,000 unit tape and reel ? device marking:m mbt3904dw1t1 = ma symbol value unit collectorCemitter voltage v ceo 40 vdc collectorCbase voltage v cbo 60 vdc emitterCbase voltage v ebo 6.0 vdc collector current C continuous i c 200 madc electrostatic discharge esd hbm>16000, mm>2000 v thermal characteristics characteristic symbol max unit total package dissipation (1) t a = 25c p d 150 mw thermal resistance junction to ambient r ja 833 c/w junction and storage temperature range t j , t stg C55 to +150 c 1. device mounted on fr4 glass epoxy printed circuit board using the minimum 1. recommended footprint. rating maximum ratings dual general purpose transistor q 1 q 2 (1) (2) (3) (4) (5) (6) featrues z ma ? MMBT3904DW1T1 2012- 0 willas electronic corp.
electrical characteristics (t a = 25 c unless otherwise noted) characteristic symbol min max unit off characteristics collectorCemitter breakdown voltage (2) (i c = 1.0 madc, i b = 0) v (br)ceo 40 C vdc collectorCbase breakdown voltage (i c = 10 adc, i e = 0) v (br)cbo 60 C vdc emitterCbase breakdown voltage (i e = 10 adc, i c = 0) v (br)ebo 6.0 C vdc base cutoff current (v ce = 30 vdc, v eb = 3.0 vdc) i bl C 50 nadc collector cutoff current (v ce = 30 vdc, v eb = 3.0 vdc) i cex C 50 nadc on characteristics (2) dc current gain (i c = 0.1 madc, v ce = 1.0 vdc) (i c = 1.0 madc, v ce = 1.0 vdc) (i c = 10 madc, v ce = 1.0 vdc) (i c = 50 madc, v ce = 1.0 vdc) (i c = 100 madc, v ce = 1.0 vdc) h fe 40 70 100 60 30 C C 300 C C C collectorCemitter saturation voltage (i c = 10 madc, i b = 1.0 madc) (i c = 50 madc, i b = 5.0 madc) v ce(sat) C C 0.2 0.3 vdc baseCemitter saturation voltage (i c = 10 madc, i b = 1.0 madc) (i c = 50 madc, i b = 5.0 madc) v be(sat) 0.65 C 0.85 0.95 vdc smallCsignal characteristics currentCgain C bandwidth product (i c = 10 madc, v ce = 20 vdc, f = 100 mhz) f t 300 C mhz output capacitance (v cb = 5.0 vdc, i e = 0, f = 1.0 mhz) c obo C 4.0 pf input capacitance (v eb = 0.5 vdc, i c = 0, f = 1.0 mhz) c ibo C 8.0 pf 2. pulse test: pulse width 300 m s; duty cycle 2.0%. 2012- 0 willas electronic corp. dual general purpose transistor MMBT3904DW1T1
electrical characteristics (t a = 25 c unless otherwise noted) (continued) characteristic symbol min max unit input impedance (v ce = 10 vdc, i c = 1.0 madc, f = 1.0 khz) h ie 1.0 2.0 10 12 k w voltage feedback ratio (v ce = 10 vdc, i c = 1.0 madc, f = 1.0 khz) h re 0.5 0.1 8.0 10 x 10 C4 smallCsignal current gain (v ce = 10 vdc, i c = 1.0 madc, f = 1.0 khz) h fe 100 100 400 400 C output admittance (v ce = 10 vdc, i c = 1.0 madc, f = 1.0 khz) h oe 1.0 3.0 40 60 mhos noise figure (v ce = 5.0 vdc, i c = 100 adc, r s = 1.0 k w , f = 1.0 khz) nf C C 5.0 4.0 db switching characteristics delay time (v cc = 3.0 vdc, v be = C0.5 vdc) t d C 35 ns rise time (i c = 10 madc, i b1 = 1.0 madc) t r C 35 ns storage time (v cc = 3.0 vdc, i c = 10 madc) t s C 200 ns fall time (i b1 = i b2 = 1.0 madc) t f C 50 ns figure 1. delay and rise time equivalent test circuit figure 2. storage and fall time equivalent test circuit +3 v 275 10 k 1n916 c s < 4 pf* +3 v 275 10 k c s < 4 pf* < 1 ns -0.5 v +10.9 v 300 ns duty cycle = 2% < 1 ns -9.1 v +10.9 v duty cycle = 2% t 1 0 10 < t 1 < 500 s * total shunt capacitance of test jig and connectors 2012- 0 willas electronic corp. dual general purpose transistor MMBT3904DW1T1
typical transient characteristics figure 3. capacitance reverse bias voltage (volts) 2.0 3.0 5.0 7.0 10 1.0 0.1 figure 4. charge data i c , collector current (ma) 5000 1.0 v cc = 40 v i c /i b = 10 q, charge (pc) 3000 2000 1000 500 300 200 700 100 50 70 2.0 3.0 5.0 7.0 10 20 30 50 70 100 200 capacitance (pf) 1.0 2.0 3.0 5.0 7.0 10 20 30 40 0.2 0.3 0.5 0.7 q t q a c ibo c obo t j = 25 c t j = 125 c figure 5. turnCon time i c , collector current (ma) 70 100 200 300 500 50 figure 6. rise time i c , collector current (ma) time (ns) 1.0 2.0 3.0 10 20 70 5 100 t , rise time (ns) figure 7. storage time i c , collector current (ma) figure 8. fall time i c , collector current (ma) 5.0 7.0 30 50 200 10 30 7 20 70 100 200 300 500 50 1.0 2.0 3.0 10 20 70 5 100 5.0 7.0 30 50 200 10 30 7 20 70 100 200 300 500 50 1.0 2.0 3.0 10 20 70 5 100 5.0 7.0 30 50 200 10 30 7 20 70 100 200 300 500 50 1.0 2.0 3.0 10 20 70 5 100 5.0 7.0 30 50 200 10 30 7 20 r t , fall time (ns) f t , storage time (ns) s v cc = 40 v i c /i b = 10 v cc = 40 v i b1 = i b2 i c /i b = 20 i c /i b = 10 i c /i b = 10 t r @ v cc = 3.0 v t d @ v ob = 0 v 40 v 15 v 2.0 v i c /i b = 10 i c /i b = 20 i c /i b = 10 i c /i b = 20 t s = t s - 1 / 8 t f i b1 = i b2 2012- 0 willas electronic corp. dual general purpose transistor MMBT3904DW1T1
typical audio smallCsignal characteristics noise figure variations (v ce = 5.0 vdc, t a = 25 c, bandwidth = 1.0 hz) figure 9. noise figure f, frequency (khz) 4 6 8 10 12 2 0.1 figure 10. noise figure r s , source resistance (k ohms) 0 nf, noise figure (db) 1.0 2.0 4.0 10 20 40 0.2 0.4 0 100 4 6 8 10 12 2 14 0.1 1.0 2.0 4.0 10 20 40 0.2 0.4 100 nf, noise figure (db) f = 1.0 khz i c = 1.0 ma i c = 0.5 ma i c = 50 a i c = 100 a source resistance = 200 i c = 1.0 ma source resistance = 200 i c = 0.5 ma source resistance = 500 i c = 100 a source resistance = 1.0 k i c = 50 a h parameters (v ce = 10 vdc, f = 1.0 khz, t a = 25 c) figure 11. current gain i c , collector current (ma) 70 100 200 300 50 figure 12. output admittance i c , collector current (ma) h , current gain h , output admittance ( mhos) figure 13. input impedance i c , collector current (ma) figure 14. voltage feedback ratio i c , collector current (ma) 30 100 50 5 10 20 2.0 3.0 5.0 7.0 10 1.0 0.1 0.2 1.0 2.0 5.0 0.5 10 0.3 0.5 3.0 0.7 2.0 5.0 10 20 1.0 0.2 0.5 oe h , voltage feedback ratio (x 10 ) re h , input impedance (k ohms) ie 0.1 0.2 1.0 2.0 5.0 10 0.3 0.5 3.0 0.1 0.2 1.0 2.0 5.0 10 0.3 0.5 3.0 2 1 0.1 0.2 1.0 2.0 5.0 10 0.3 0.5 3.0 fe -4 2012- 0 willas electronic corp. dual general purpose transistor MMBT3904DW1T1
typical static characteristics figure 15. dc current gain i c , collector current (ma) 0.3 0.5 0.7 1.0 2.0 0.2 0.1 h , dc current gain (normalized) 0.5 2.0 3.0 10 50 70 0.2 0.3 0.1 100 1.00.7 200 3020 5.0 7.0 fe v ce = 1.0 v t j = +125 c +25 c -55 c figure 16. collector saturation region i b , base current (ma) 0.4 0.6 0.8 1.0 0.2 0.1 v , collector emitter voltage (volts) 0.5 2.0 3.0 10 0.2 0.3 0 1.00.7 5.0 7.0 ce i c = 1.0 ma t j = 25 c 0.070.05 0.030.02 0.01 10 ma 30 ma 100 ma figure 17. on voltages i c , collector current (ma) 0.4 0.6 0.8 1.0 1.2 0.2 figure 18. temperature coefficients i c , collector current (ma) v, voltage (volts) 1.0 2.0 5.0 10 20 50 0 100 -0.5 0 0.5 1.0 0 60 80 120 140 160 180 20 40 100 coefficient (mv/ c) 200 -1.0 -1.5 -2.0 200 t j = 25 c v be(sat) @ i c /i b =10 v ce(sat) @ i c /i b =10 v be @ v ce =1.0 v +25 c to +125 c -55 c to +25 c +25 c to +125 c -55 c to +25 c vc for v ce(sat) vb for v be(sat) 2012- 0 willas electronic corp. dual general purpose transistor MMBT3904DW1T1
0.5 mm (min) 0.4 mm (min) 0.65 mm 0.65 mm 1.9 mm sot - 363 2012- 0 willas electronic corp. dual general purpose transistor MMBT3904DW1T1 dimensions in inches and (millimeters) .056(1.40) .047(1.20) .071(1.80) .004(0.10)min. .010(0.25) .003(0.08) .043(1.10) .032(0.80) .016(0.40) .004(0.10) .004(0.10)max. .087(2.20) .071(1.80) .054(1.35) .045(1.15) .021(0.55) .030(0.75) .096(2.45)
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